TG-120 Datasheet | Specifications & PDF Download

Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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NTST30120CT, NTSJ30120CTG, NTSB30120CT-1G, NTSB30120CTG, NTSB30120CTT4G Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF

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HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require

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LCFE Series Common Mode Noise Filter LCFE Series Pinout 0605mm Size Pin6 Pin2 Pin3 Pin1 Pin4 Item Rdc CM Impedance IL IRCR Pin5 Description

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LCFE Series Common Mode Noise Filter LCFE Series Pinout 0605mm Size Pin6 Pin2 Pin3 Pin1 Pin4 Item Rdc CM Impedance IL IRCR Pin5 Description

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General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed fo

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Features Regulated Converters • 2:1 Wide Input Voltage Range • 1.6kVDC Isolation • UL Certified • Efficiency up to 90% • Six-Sided Continuous Shield •

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TGL41-6.8 THRU TGL41-200A SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 200 Volts Peak Pulse Power - 400 Watts FEAT

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Features Regulated Converters • 2:1 Wide Input Voltage Range • 1.6kVDC Isolation • UL Certified • Efficiency up to 90% • Six-Sided Continuous Shield •

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HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new

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Free Datasheet http://www.datasheet4u.com/ A. SCOPE ½dÃ¥ This specification applies magnetic buzzer, KTG1205 ¦¹³W®æѾA¥Î©ó¹qºÏ¦¡¸Á»ï¾¹, KTG1205 B. S

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HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N

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STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features ■ ■ ■ ■ ■ Low on-losses High current capability Low g

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MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 13.5dB at Pi

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UNISONIC TECHNOLOGIES CO., LTD UTG25N120-G2 Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG25N120-G2

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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Silicon Carbide (SiC) Module – 15 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package Product Preview NXH015P120M3F1PTG The NXH015P12

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