HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DE.
ESMT
M12L64164A-6TG2Y - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ON Semiconductor
MUR1640CTG - Switch-mode Power Rectifier
Switch-mode Power Rectifiers MUR1620CTG, MUR1640CTG, MUR1660CTG These state−of−the−art devices are a series designed for use in switching power suppli.
Clare Inc
TG-164 - HIGH ENERGY SPARK GAP DEVICES
HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require .
ESMT
M12L64164A-6TG2C - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program.
ESMT
M12L64164A-7TG2C - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program.
ESMT
M12L64164A-7TG2Y - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ESMT
M12L64164A-6TG2M - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ESMT
M13S64164A-4TG2Y - 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock.
ESMT
M13S64164A-5TG2Y - 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock.
ESMT
M13S64164A-6TG2Y - 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock.
ESMT
M13S64164A-6TG - 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
ESMT M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architectur.
ESMT
M12L64164A-5TG2C - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program.
Eorex
EM488M1644VTG - 128Mb Synchronous DRAM
eorex EM488M1644VTG 128Mb (2M4Bank16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V 0.3V Power Supply • LVT.
ESMT
M12L64164A-5TG2Y - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ESMT
M12L64164A-5TG2M - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ESMT
M12L64164A-7TG2M - 1M x 16 Bit x 4 Banks Synchronous DRAM
ESMT SDRAM FEATURES y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key.
ESMT
M13S64164A-5TG - 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
ESMT M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architectur.
