TG-30 Datasheet | Specifications & PDF Download

TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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TGPF30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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CREAT BY ART MBR3040CTG THRU MBR30200CTG 30.0 AMPS. Schottky Barrier Rectifiers - - 12 3 1 2 3 Marking Diagram YAWW MBR30XX Y = Year A = Assembly

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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CSC3301 DC/DC CSC3301 、 （380KHz）。 2.5 4.5V， 5V ， 250mA。（ VIN VOUT 2 ） CSC3301 。 ， ， 。， VOUT GND 。 。 ，。 ， 1uA。 SOT23-6 VOUT 1 6 C+ GND

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P3055LTG-VB P3055LTG-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS =

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TTG20P03ATC Wuxi Unigroup Microelectronics CO.,LTD. 30V P-Channel Trench MOSFET(Preliminary) General Description Product Summary  Trench Power te

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TTG120N03AT Wuxi Unigroup Microelectronics CO.,LTD. 30V N-Channel Trench MOSFET(Preliminary) General Description  Trench Power Technology  Low RDS(

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Free Datasheet http://www.nDatasheet.com Taiwan Goodark Technology Co.,Ltd 、 300mA CMOS LN1134 http://www.goodark.asia Free Datasheet http:

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MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for Paralle

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Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 1

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TIGER ELECTRONIC CO.,LTD Product specification SWITCHMODE Series NPN Silicon Power Transistors MJE13009 DESCRIPTION These devices are designed for

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STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TA

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