Features Low gate charge 100% avalanche te.
JIATAIMU
JTMT8823 - System Power PWM Controller
JTMT8823 System Power PWM Controller with Economy Standby Mode Features Simplified Application Circuit Wide Input voltage Range from 5.5V to 25.
ART CHIP
MTMT8N40 - N-Channel Power MOSFETs
IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MO.
TRinno
TMT3N40ZG - N-channel MOSFET
TMT3N40ZG Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualificatio.
TRinno
TMT3N30G - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D Device.
TMT
T431616B - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm • • • • • • • • • TE CH T431616B SDRAM FEATURES +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All in.
TMT
T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed add.
TMT
T431616D - (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Inte.
TMT
T431616E - (T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
tm TE CH T431616D/E SDRAM FEATURES Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Inte.
ABRACON
ASTMTXK - MEMS Oscillator
Ultra-miniature, Low Power, 32.768kHz MEMS Oscillator ASTMTXK ESD Sensitive Pb Moisture Sensitivity Level (MSL) – 1 FEATURES: • Smallest 32.768k.
ON Semiconductor
NTMTS0D4N04CL - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel 40 V, 0.4 mW, 553.8 A NTMTS0D4N04CL Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimiz.
ON Semiconductor
NTMTS6D0N15MC - N-Channel Power MOSFET
MOSFET – Power, Single N-Channel, DFNW8 150 V, 6.4 mW, 135 A NTMTS6D0N15MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to M.
ON Semiconductor
NTMTSC1D5N08MC - N-Channel MOSFET
MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL) 80 V, 1.56 mW, 287 A NTMTSC1D5N08MC Features • Small Footprint (8x8 mm) for Compact Design • Low .
ON Semiconductor
NTMT150N65S3HF - N-Channel MOSFET
MOSFET - Power, N-Channel, SUPERFET) III, FRFET) 650 V, 24 A, 150 mW NTMT150N65S3HF Description SUPERFET III MOSFET is onsemi’s brand−new high voltage.
ON Semiconductor
NTMTS0D7N06CL - N-Channel MOSFET
MOSFET - Power, Single N-Channel 60 V, 0.68 mW, 477 A NTMTS0D7N06CL Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize.
ON Semiconductor
NTMTS0D7N04C - N-Channel MOSFET
MOSFET – Power, Single N-Channel 40 V, 0.67 mW, 420 A NTMTS0D7N04C Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize .
ON Semiconductor
NTMTS0D6N04CL - Power MOSFET
NTMTS0D6N04CL Power MOSFET 40 V, 0.42 mW, 554.5 A, Single N−Channel Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize .
ON Semiconductor
NTMTS002N08MC - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel, DFNW8 80 V, 2 mW, 229 A NTMTS002N08MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Mini.
ON Semiconductor
NTMT090N65S3HF - N-Channel Power MOSFET
MOSFET - Power, N-Channel, SUPERFET) III, FRFET) 650 V, 36 A, 90 mW NTMT090N65S3HF Description SUPERFET III MOSFET is onsemi’s brand−new high voltage .
ON Semiconductor
NTMT185N60S5H - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel, SUPERFET) V, FAST, Power88 600 V, 185 mW, 15 A NTMT185N60S5H Description The SUPERFET V MOSFET FAST series helps m.
