TN25 Datasheet | Specifications & PDF Download

CHIMEI INNOLUX DISPLAY CORPORATION LCD MODULE S P E C I F I C AT I O N Customer: Model Name: SPEC NO.: Date: Version: AT043TN25 V.2 A043-25-TT-21 20

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Supertex inc. TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold (2.0V max.) ►► High input impeda

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www.vishay.com PTN Vishay Dale Thin Film Commercial Thin Film Chip Resistor, Surface Mount Chip Actual Size 1505 These chip resistors are availabl

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CYStech Electronics Corp. Spec. No. : C741H8 Issued Date : 2015.10.15 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN251

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® TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 25 600 to 1000 40 Unit G A A K V A A mA K A G K

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www.DataSheet4U.com ZXTN25020DFH 20V SOT23 NPN medium power transistor Summary BVCEX > 100V; BV(BR)CEO > 20V BVECO > 5V; IC(CONT) = 4.5A RCE(sat) = 2

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www.DataSheet4U.com ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 5A VCE(sat) < 70mV @ 1

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www.DataSheet4U.com 2STN2540 Low voltage fast-switching PNP power bipolar transistor Preliminary Data General features ■ ■ ■ ■ Very low collector-e

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ZXTN25060BFH 60V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 3.5A VCE(sat) < 65 mV @ 1A RCE(sat) = 43 m

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ZXTN25100BFH 100V, SOT23, medium power transistor Summary BVCEX > 170V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 80mV @ 1A RCE(sat) = 67m⍀ PD =

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ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 95mV @ 1A RCE(sat) = 86m

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ZXTN25020BFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 50V BVCEO > 20V BVECO > 3V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 27 m⍀

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Loose polyPROPYLENE capacitor WITH DOUBLE SIDED METALLIZED FILM ELECTRODES D.C. AND PULSE APPLICATIONS MMKP Series R76 Taped Typical applications

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ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀

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TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs A G K A A G A K G K AG D²PAK TO-220AB K AG TO-220AB Insulated Datasheet - product

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TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • 125 pF Maximum Low Input Capacitanc

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TN2501 N-Channel Enhancement-Mode Vertical DMOS FET Features • Low Threshold • High Input Impedance • 110 pF Maximum Low-Input Capacitance • Fast Sw

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MITSUMI • • • Any products mentioned in this catalog are subject to any modification in their appearance and others for improvements without prior no

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Features  BVCEX > 180V  BVCEO > 100V  BVECO > 6V  IC = 3A High Continuous Current  Low Saturation Voltage VCE(sat) < 100mV @ 1A  RCE(sat) = 85mΩ

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TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • 125 pF Maximum Low Input Capacitanc

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