TQ4 Datasheet | Specifications & PDF Download

LinearL2TM Power MOSFET w/Extended FBSOA IXTT40N50L2 IXTQ40N50L2 IXTH40N50L2 VDSS = 500V ID25 = 40A  RDS(on) 170m N-Channel Enhancement Mode Aval

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw

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4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83CFR-xxC H5TQ4G83CFR-xxI H5TQ4G83CFR-xxL H5TQ4G83CFR-xxJ H5TQ4G63CFR-xxC

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PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS = ID25 = ≤ RDS(on) 250 42 84 V A mΩ N-Channel Enhancement Mode Avalanche Rated T

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Polar2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP450P2 IXTQ450P2 IXTH450P2 VDSS ID25 RDS(on) trr(typ) = =

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4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G43AFR-xxC H5TQ4G83AFR-xxC H5TQ4G63AFR-xxC * SK hynix reserves the right

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High Current Power MOSFET Q-Class IXTQ 40N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Data Sheet VDSS ID25 RDS(on) = 500 V

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) ·Fast Sw

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4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83EFR-xxC H5TQ4G83EFR-xxI H5TQ4G83EFR-xxL H5TQ4G83EFR-xxJ H5TQ4G83EFR-xxK

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AM Hybrid Transmitter AM-RT4-XXX AM-RT5-XXX AM-RTQ4-XXX AM-RT14-XXX Features • Complete RF Transmitter • CMOS / TTL Input • No Adjustable Components

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ITQ Series DC-DC Converter 6 Watts xxx Series• Single & Dual Outputs • 4:1 Input Range • Operating Temperature 40 °C to +100 °C • 1500 VDC Isolation

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Silan Microelectronics SGTQ40T120SDB2P7_Datasheet 40A, 1200V FIELD STOP IGBT DESCRIPTION The SGTQ40T120SDB2P7 field stop IGBT adopts Silan Trench Fi

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TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T VDSS

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AM Hybrid Transmitter AM-RT4-XXX AM-RT5-XXX AM-RTQ4-XXX AM-RT14-XXX Features • Complete RF Transmitter • CMOS / TTL Input • No Adjustable Components

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4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83AFR-xxC H5TQ4G83AFR-xxI H5TQ4G83AFR-xxL H5TQ4G83AFR-xxJ H5TQ4G63AFR-xxC

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ITQ Series DC-DC Converter 6 Watts xxx Series• Single & Dual Outputs • 4:1 Input Range • Operating Temperature 40 °C to +100 °C • 1500 VDC Isolation

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) ·Fast Swi

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Preliminary Technical Information PolarP2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ480P2 VDSS = ID25 =

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4Gb DDR3 SDRAM 4Gb DDR3 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TQ4G83AFR-xxC H5TQ4G83AFR-xxI H5TQ4G83AFR-xxL H5TQ4G83AFR-xxJ H5TQ4G63AFR-xxC

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