IXTQ40N50Q Datasheet - IXYS

IXTQ40N50Q Power MOSFET

High Current Power MOSFET Q-Class IXTQ 40N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Data Sheet VDSS ID25 RDS(on) = 500 V = 40 A = 0.16 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from ca.

IXTQ40N50Q Features

* z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Symbol VDSS VGS(th) IGSS ID

IXTQ40N50Q-IXYS.pdf