IXTQ42N25P Datasheet - IXYS Corporation

IXTQ42N25P Power MOSFET

PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS = ID25 = ≤ RDS(on) 250 42 84 V A mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C.

IXTQ42N25P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99157E(12/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(

IXTQ42N25P_IXYSCorporation.pdf