IXTQ480P2 Datasheet - INCHANGE

IXTQ480P2, N-ChannelMOSFET

isc N-Channel MOSFET Transistor *.

Features

* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 120mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 52 A IDM Drain Current-Single Plused 150 A PD Total Dissipation @TC=25℃ 960

IXTQ480P2-INCHANGE.pdf