IXTQ480P2
INCHANGE
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IXTQ480P2 - Power MOSFET
(IXYS)
Preliminary Technical Information
PolarP2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTQ480P2
VDSS =
ID25
=
.
IXTQ48N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTA48N20T IXTP48N20T IXTQ48N20T
Symbol VDSS VDGR VGSM ID2.
IXTQ48N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 50mΩ(Max) ·Fast Swi.
IXTQ40N50L2 - Power MOSFET
(IXYS)
LinearL2TM Power MOSFET w/Extended FBSOA
IXTT40N50L2 IXTQ40N50L2 IXTH40N50L2
VDSS = 500V
ID25 = 40A RDS(on) 170m
N-Channel Enhancement Mode Aval.
IXTQ40N50L2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 170mΩ(Max) ·Fast Sw.
IXTQ40N50Q - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Sw.
IXTQ40N50Q - Power MOSFET
(IXYS)
High Current Power MOSFET
Q-Class
IXTQ 40N50Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Data Sheet
VDSS ID25 RDS(on)
= 500 V .
IXTQ42N25P - Power MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTA 42N25P IXTP 42N25P IXTQ 42N25P
VDSS =
ID25 = ≤ RDS(on)
250 42 84
V A mΩ
N-Channel Enhancement Mode Avalanche Rated
T.
IXTQ44N50P - Polar N-channel MOSFET
(IXYS Corporation)
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTQ44N50P
VDSS = ID25 =
RDS(on)
500V 44A 140m
TO-3P
.
IXTQ44N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 140mΩ(Max) ·Fast Sw.