IXTQ110N10P N-Channel MOSFET

INCHANGE

IXTQ110N10P Description

isc N-Channel MOSFET Transistor *.

IXTQ110N10P Features

* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

IXTQ110N10P Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* AC and DC Motor Drives
* Robotics and Servo Controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Curr

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Datasheet Details

Part number: IXTQ110N10P
Manufacturer: INCHANGE
File Size: 267.90 KB
Datasheet: IXTQ110N10P-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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