IXTQ450P2, IXTP450P2 Datasheet - IXYS

IXTQ450P2 - Power MOSFETs

Polar2TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTP450P2 IXTQ450P2 IXTH450P2 VDSS ID25 RDS(on) trr(typ) = = ≤ = 500V 16A 330mΩ 400ns TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Lead Temperature.

IXTQ450P2 Features

* z Avalanche Rated z Fast Intrinsic Diode z Dynamic dv/dt Rated z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Contr

IXTP450P2-IXYS.pdf