IXTQ48N20T Datasheet - IXYS

IXTQ48N20T Power MOSFET

TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA48N20T IXTP48N20T IXTQ48N20T Symbol VDSS VDGR VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Force (TO-263) Mounting Torque (TO-2.

IXTQ48N20T Features

* z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterrup

IXTQ48N20T Datasheet (179.61 KB)