Clock and Data Recovery Products TRU-600 Descripti.
KAI-16000 - Image Sensor
KAI-16000 IMAGE SENSOR 4872 (H) X 3248 (V) INTERLINE CCD IMAGE SENSOR JUNE 22, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0013 KAI-16000 I.G121600N000 - LIQUID CRYSTAL DISPLAY MODULE
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Add-on Structure Contact Image Sensor Heads LSH6008-CA10A Data Sheet The Basic CIS by which the add-on can shorten the development period of a product.TSP8N60M - 600V N-Channel MOSFET
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TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.LE39M600CF - LED Backlit Flat TV Instruction Manual
LE39M600CF LE46M600CF LE50M600CF 01 Safety Warnings Welcome Important Information Safety notice Warning and cautions 02 Introduction Main Parameter B.S-7600A - Hardware Specification (TCP/IP Network Stack LSI)
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TSF80R600S1 800V 9A N-Channel SJ-MOSFET TSF80R600S1 800V 9A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high voltag.TRU-600 - Clock and Data Recovery
Clock and Data Recovery Products TRU-600 Description: The TRU-600 is a high frequency, SAW based Clock and Data Recovery Module. It offers very low ji.TSF5N60M - 600V N-Channel MOSFET
www.DataSheet4U.net TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness .TSP5N60M - 600V N-Channel MOSFET
www.DataSheet4U.net TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness .PP600D170 - Integrated IGBT Power Structures
POW-R-PAK: Flexible, Integrated IGBT Power Structures The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converte.LSH6008-CA50A - Add-on Structure Contact Image Sensor Heads
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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 10.TSP12N60M - 600V N-Channel MOSFET
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TSP2N60M / TSF2N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. .TSP10N60M - 600V N-Channel MOSFET
TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.KP524208A - 600kHz synchronous buck converter
KP524201A, KP524208A TSOT23-6 4.5V 17V 、4A 、600kHz 1 :4.5V to 17V :0.768V to 7V 4A 600kHz 75mΩ 45mΩ MOSFET :190μA (,) :2.5.