TRU-600 Datasheet | Specifications & PDF Download

TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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450 MHz to 6000 MHz TruPwr Detector ADL5505 FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. te

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www.DataSheet4U.net TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness

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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 10

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TSP2N60M / TSF2N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

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LCD MODULE TFT1024600-30-E Version: 0.1 July 9, 2013 PRODUCT MODEL NO. SUPPLIER DATE LCD MODULE : : TFT1024600-30-E TRULY SEMICONDUCTORS LTD

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KP524201A, KP524208A TSOT23-6 4.5V 17V 、4A 、600kHz 1  ：4.5V to 17V  ：0.768V to 7V  4A  600kHz  75mΩ 45mΩ MOSFET  ：190μA (，)  ：2.5

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TSP12N60M / TSF12N60M TSP12N60M / TSF12N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced plana

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FEATURES True rms response detector Excellent temperature stability ±0.25 dB rms detection accuracy vs. temperature Over 35 dB input power dynamic ran

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Add-on Structure Contact Image Sensor Heads LSH6008-CA10A Data Sheet The Basic CIS by which the add-on can shorten the development period of a product

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Topstek True RMS Current Transducer TFC30P80A ..1500A-CL420 True RMS 4-20mA Current Loop Output CT TFC30P 80A~1500A-CL420 Features ♦ Highly reliable

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KAI-16000 IMAGE SENSOR 4872 (H) X 3248 (V) INTERLINE CCD IMAGE SENSOR JUNE 22, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0013 KAI-16000 I

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KP524201A, KP524208A TSOT23-6 4.5V 17V 、4A 、600kHz 1  ：4.5V to 17V  ：0.768V to 7V  4A  600kHz  75mΩ 45mΩ MOSFET  ：190μA (，)  ：2.5

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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 10

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TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology

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POW-R-PAK: Flexible, Integrated IGBT Power Structures The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converte

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AN.No.G121600N000-3D0E LIQUID CRYSTAL DISPLAY MODULE G121600N000 USER’S MANUAL www.DataSheet.net/ Seiko Instruments Inc. Datasheet pdf - http://w

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LE39M600CF LE46M600CF LE50M600CF 01 Safety Warnings Welcome Important Information Safety notice Warning and cautions 02 Introduction Main Parameter B

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