U306 Datasheet | Specifications & PDF Download

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NSPU3061 6.3 V Unidirectional ESD and Surge Protection Device The NSPU3061 is designed to protect voltage sensitive components from ESD. Excellent c

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www.DataSheet4U.com LUM-512HMU306 LED displays 16×32 dot matrix unit LUM-512HMU306 The LUM-512HMU306 is a 16×32 dot matrix display which can be used

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www.DataSheet4U.com LUM-115HMU306 LED displays 24×48 dot matrix unit LUM-115HMU306 The LUM-115HMU306 is a 24×48 dot matrix display which can be used

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Type PSU AC Motor Start Capacitors Non-polarized, Aluminum Electrolytic AC Motor Start Capacitors The Type PSU is a compact non-polar, dual voltage ra

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TOTAL POWER INT'L MAU300 Series 2 Watt Ultra Miniature High Isolation SIP DC/DC SinCgloen&verDteurasl wOiuthtput Key Features l SMT Technology l Min

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MURU3060P RoHS COMPLIANT Ultra-Fast Recovery Diodes 30A FRED Features ● Adopt FRED chip ● Low forward Voltage drop ● Fast reverse recovery time ● H

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell

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FEATURES ►SIP Package with Industry Standard Pinout ►Package Dimension: 19.5 x 10.2 x 7.6 mm (0.77”x 0.4”x 0.3”) ►Single and Dual Output Models ►I/O-I

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p-channel JFETs designed for • • • • Analog Switches • Commutators • Choppers H Siliconix Performance Curves PSA/PSB/PSC See Section 4 BENEFITS • Low

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isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BD306F 400V(Min)- BD307F ·C

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RU3065L N-Channel Advanced Power MOSFET MOSFET Features • 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V • Super High Dense Cell

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RU3060L-VB RU3060L-VB Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.009 at V

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HVU306A Variable Capacitance Diode for VHF tuner ADE-208-045D (Z) Rev 4 Nov. 1998 Features • Low series resistance. (rs=11.0Ωmax) • Low series resist

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RU3060L N-Channel Advanced Power MOSFET MOSFET Features • 30V/53A, RDS (ON) =9mΩ(tpy.)@VGS=10V RDS (ON) =13mΩ(tpy.)@VGS=4.5V • Super High Dense Cell

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RU306C N-Channel Advanced Power MOSFET Features • 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ V

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