Vergiga Datasheet | Specifications & PDF Download

Features  Enhancement mode  Low RDS(on) to minimize conduction losses  VitoMOS® Ⅱ Technolog  100% Avalanche Tested,100% Rg Tested VS3614GE 30V/31

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Features  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested,100% Rg Tested VSP012N12MS-G 120V/42

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  Super Junction Technology  Ultra-fast and robust body diode  100% Avalanche tes

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Features  Enhancement mode  Very low on-resistance  VitoMOS® Ⅱ Technology  100% Avalanche Tested,100% Rg Tested VSP003N04HS-G 40V/33A N-Channel A

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VS3647DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET Features  Dual Asymmetric N-Channel  VitoMOS® Ⅱ Technology  100% Avalanche Tested,100

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Features  Enhancement mode  Low RDS(on) to minimize conduction losses  VitoMOS® Ⅱ Technology  100% Avalanche Tested, Rg 100% Tested VS1602GMH 100

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Features  Enhancement mode  VitoMOS® Ⅱ Technology  100% Avalanche Tested,100% Rg Tested VS1850GE 100V/7.4A N-Channel Advanced Power MOSFET V DS R

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HCKD5N65BM2 Trench-FS Cool-Watt @Ⅱ IGBT HCKD5N65BM2 is a 650V5A IGBT discrete with high speed soft switching of Trench Field stop technology.The produ

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VSE003N04MS-G 40V/40A N-Channel Advanced Power MOSFET Features V DS 40 V  Enhancement mode  Low RDS(on) to minimize conduction losses  VitoMOS

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VS1891GMH 100V/195A N-Channel Advanced Power MOSFET Features  Enhancement mode  Low RDS(on) to minimize conduction losses  VitoMOS® Ⅱ Technology 

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Features  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche test VS6613GE 60V/46A N-Channel Advanced Po

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VS4620DE-G 40V/14A Dual N-Channel Advanced Power MOSFET Features V DS R @ DS(on),TYP VGS=10V 40 V 9 mΩ  Dual N-Channel R @ DS(on),TYP VGS=4.5V

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