WANSEMI Datasheet | Specifications & PDF Download

WP3080KA Enhancement Mode N-Channel Power MOSFET TO-252/NMOS/30V/±20V/1.6V/80A/4.5mΩ Rev0.9 WP3080KA 30V, 4.5mΩ, 80A, Single N-Channel 1.Features ◆

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WP3080APA PDFN5X6/NMOS/30V/±20V/1.7V/80A/3.8mΩ Rev1.1 WP3080APA 30V, 3.8mΩ, 80A, Single N-Channel 1.Features  30V MOSFET technology  Low on-state

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KS62024LAT2 Single N-Channel Advanced Power MOSFET Features • 60V/275A, RDS (ON) =1.3mΩ(Typ.)@VGS=10V RDS (ON) =2mΩ(Typ.)@VGS=4.5V • Excellent QG x R

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WP40210KPA Enhancement Mode N-Channel Power MOSFET PDFN5X6/NMOS/40V/±20V/1.5V/210A/1.6mΩ Rev0.1 WP40210KPA 40V, 1.6mΩ, 210A, N-Channel Enhancement M

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KS32026DAT Single N-Channel Advanced Power MOSFET Features • 30V/220A, RDS (ON) =1.4mΩ(Typ.)@VGS=10V RDS (ON) =1.8mΩ(Typ.)@VGS=4.5V • Excellent QG x

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WP4090KA Enhancement Mode N-Channel Power MOSFET TO-252/NMOS/40V/±20V/1.7V/90A/4.0mΩ Rev0.6 WP4090KA 40V, 4.0mΩ, 90A, Single N-Channel 1.Features ◆

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KS62036CAT Single N-Channel Advanced Power MOSFET Features • 60V/170A, RDS (ON) =2.9mΩ(Typ.)@VGS=10V RDS (ON) =3.8mΩ(Typ.)@VGS=4.5V • Excellent QG x

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Features • 200V/14A, RDS (ON) =145mΩ(Typ.)@VGS=10V • Low RDS (ON) • Planar Technology • Reliable and Rugged • 100% Avalanche Tested • 100% Rg Tested A

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WP2090KPA Enhancement Mode N-Channel Power MOSFET PDFN5X6/NMOS/20V/±12V/0.95V/90A/3.0mΩ Rev0.1 WP2090KPA 20V, 3.0mΩ, 90A, Single N-Channel 1.Featur

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Features • -20V/-4.1A, RDS (ON) =38mΩ(Typ.)@VGS=-4.5V RDS (ON) =50mΩ(Typ.)@VGS=-2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugg

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Features • N-Channel 40V/7A, RDS (ON) =18mΩ(Typ.) @ VGS=10V RDS (ON) =24mΩ(Typ.) @ VGS=4.5V • P-Channel -40V/-5A, RDS (ON) =45mΩ (Typ.) @ VGS=-10V RDS

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Features • 20V/6A, RDS (ON) =26mΩ(Typ.)@VGS=4.5V RDS (ON) =36mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged App

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