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9013 - NPN SILICON TRANSISTOR
9013 NPN SILICON TRANSISTOR TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR).9014 - NPN SILICON TRANSISTOR
9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO :.D389 - NPN EPITAXIAL SILICON TRANSISTOR
2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Coll.78L18 - Positive-Voltage Regulators
78L18 D D D D D D 3-Terminal Regulators Output Current up to 100 mA No External Components Internal Thermal-Overload Protection Internal Short-Circuit.2SC1047 - Silicon Transistor
2SC1047 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor High frequency, high power transistors in a plastic envelope, primarily for use in a.2SC1061 - NPN EPITAXIAL SILICON TRANSISTOR
2SC1061 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Character.HC-49SSMD - CRYSTAL UNIT
HC-49/S SMD 1. SCOPE CRYSTAL UNIT This specification shall cover the characteristics of crystal unit with HC-49/S SMD 3.579545—27.00MHz 2. ELECTRICA.1N5399 - SILICON RECTIFIER
1N5391 - 1N5399 VOLTAGE RANGE - 50 to 1000 Volts MECHANICAL DATA * * * * * * Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-.BUT11 - NPN SILICON TRANSISTOR
BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emi.MJ10000 - NPN Silicon Transistor
MJ10000 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characterist.MJ10001 - NPN Silicon Transistor
MJ10001 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characterist.TIP142 - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
TIP140/141/142 HIGH DC CURRENT GAIN NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR •Complementary to TIP145/146/147 SC-65 ABSOLUTE MAXIMUM RATINGS (T.WMBT5401LT1 - PNP Silicon Transistor
WMBT5401LT1 PNP Silicon Transistor 1 BASE 2 EMITTER 1 COLLECTOR 3 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emi.KA3842A - PWM CONTROLLER
Linear Integrated Circuit CURRENT−MODE PWM CONTROLLER The KA3842A KA3842AM are fixe frequency current-mode PWM controller. They are specially designed.D1554 - NPN Triple Diffused Planar Silicon Transistor
www.DataSheet4U.com 2SD1554 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High C.D1555 - NPN Triple Diffused Planar Silicon Transistor
2SD1555 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage.D716 - 2SD716
2SD716 GENERAL DESCRIPTION SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily f.1N5395 - SILICON RECTIFIER
1N5391 - 1N5399 VOLTAGE RANGE - 50 to 1000 Volts MECHANICAL DATA * * * * * * Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-.1N5398 - SILICON RECTIFIER
1N5391 - 1N5399 VOLTAGE RANGE - 50 to 1000 Volts MECHANICAL DATA * * * * * * Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-.DB310K - BI-DIRECTIONAL TRIGGER DIODES
DB3 BI-DIRECTIONAL TRIGGER DIODES DO-35 Symbol VBO Parameter BREAKDOWN VOLTAGE Test Condition 1 SEE FIG 1 t Min Typ Max Uni Type Package m.