Wisdom Datasheet | Specifications & PDF Download

Wisdom Semiconductor WFW20N50 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capabilit

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Wisdom Semiconductor WFP85N06 N-Channel MOSFET Features ■ RDS(on) (Max 0.013 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability,

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Wisdom Semiconductor WFF730 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.95 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 25nC) ■ Improv

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HIGH VOLTAGE N-Channel MOSFET      WFP10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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PROVISIONAL Wisdom Semiconductor WFW10N80 Features ■ RDS(on) (Max 1.05 Ω )@VGS=10V ■ Gate Charge (Typical 55nC) www.DataSheet4U.com ■ Improved dv/dt

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HIGH VOLTAGE N-Channel MOSFET      WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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Wisdom Semiconductor WFF7N65 N-Channel MOSFET Features ■ RDS(on) (Max 1.4 Ω )@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability, Hig

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Wisdom Semiconductor WFW20N60 N-Channel MOSFET Features ■ RDS(on) (Typical 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 80nC) ■ Improved dv/dt Capabilit

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www.DataSheet4U.com Wisdom Semiconductor WFP75N08 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.015 Ω )@VGS=10V Gate Charge (Typical 80nC) Im

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Wisdom Semiconductor WFF740 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.55 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 38nC) ■ Improv

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HIGH VOLTAGE N-Channel MOSFET      WFF5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Exte

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HIGH VOLTAGE N-Channel MOSFET      WFF8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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Wisdom Semiconductor WFF840 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.85 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 38nC) ■ Improv

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Wisdom Semiconductor WFF7N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High

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Wisdom Semiconductor WFF2N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High

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Wisdom Semiconductor WFF4N65 N-Channel MOSFET Features ■ RDS(on) (Max 2.7 Ω )@VGS=10V ■ Gate Charge (Typical 15nC) ■ Improved dv/dt Capability, Hig

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PRELIMILARY Wisdom Semiconductor WFN1N70 N-Channel MOSFET Features ■ RDS(on) (Max 14.0 Ω )@VGS=10V ■ Gate Charge (Typical 5.0nC) ■ Improved dv/dt C

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PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Cap

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Wisdom Semiconductor WFP75N75 N-Channel MOSFET Features ■ RDS(on) (Max 0.017 Ω )@VGS=10V ■ Gate Charge (Typical 85nC) ■ Improved dv/dt Capability,

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HIGH VOLTAGE N-Channel MOSFET      WFF12N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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