Wisdom Datasheet | Specifications & PDF Download

www.DataSheet4U.com Wisdom Semiconductor WFP75N08 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.015 Ω )@VGS=10V Gate Charge (Typical 80nC) Im

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Wisdom Semiconductor WFW20N50 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capabilit

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HIGH VOLTAGE N-Channel MOSFET      WFN1 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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HIGH VOLTAGE N-Channel MOSFET      WFP5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Exte

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HIGH VOLTAGE N-Channel MOSFET      WFU5N60/WFD5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics

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www.DataSheet4U.com Wisdom Semiconductor WFP634 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.45 Ω )@VGS=10V Gate Charge (Typical 29nC) Impro

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Wisdom Semiconductor WFF830 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.4 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 25nC) ■ Improve

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Wisdom Semiconductor WFR630 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.4 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability,

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PRELIMILARY Wisdom Semiconductor WFN1N70 N-Channel MOSFET Features ■ RDS(on) (Max 14.0 Ω )@VGS=10V ■ Gate Charge (Typical 5.0nC) ■ Improved dv/dt C

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Wisdom Semiconductor WFU1N80 N-Channel MOSFET Features ■ RDS(on) (Max 18.0 Ω )@VGS=10V ■ Gate Charge (Typical 6.5nC) ■ Improved dv/dt Capability, H

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Wisdom Semiconductor WFW24N60 N-Channel MOSFET Features ■ RDS(on) (Typical 0.22 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capabilit

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PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Cap

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Wisdom Semiconductor WFF8N80 N-Channel MOSFET Features ■ RDS(on) (Max 1.6 Ω )@VGS=10V ■ Gate Charge (Typical 39nC) ■ Improved dv/dt Capability, Hig

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Wisdom Semiconductor WFP75N75 N-Channel MOSFET Features ■ RDS(on) (Max 0.017 Ω )@VGS=10V ■ Gate Charge (Typical 85nC) ■ Improved dv/dt Capability,

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HIGH VOLTAGE N-Channel MOSFET      WFF12N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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HIGH VOLTAGE N-Channel MOSFET      WFP12N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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HIGH VOLTAGE N-Channel MOSFET      WFP10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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HIGH VOLTAGE N-Channel MOSFET      WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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HIGH VOLTAGE N-Channel MOSFET      WFP8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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HIGH VOLTAGE N-Channel MOSFET      WFU4N60/WFD4N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics

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