gaas Datasheet | Specifications & PDF Download

Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

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CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

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PRELIMINARY MXP4000 Series OPTO ELECTRONIC PRODUCTS InGaAs/InP PIN Photodiode Chips P RODUCT P REVIEW DESCRIPTION KEY FEATURES W W W . Microsemi

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50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features:  High reliability, Ultra low dark curre

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 ø2.5±0.2 6.0±0.2 1.0 Not soldered Unit : mm 4.

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Max. Input Power HG-0711 Absolute Maximum Ratings Item Symbol Conditions Max. Input Voltage Max.Input Power P Operating Temp. Range Topr Storage

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0.300-INCH SEVEN SEGMENT DISPLAYS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN

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www.DataSheet4U.com Product Specification D8740270GT GaAs Power Doubler, 40 – 870MHz, 27.0dB min. Gain @ 870MHz, 375mA max. @ 24VDC FEATURES • • •

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GaAs SPDT Terminated Switch DC - 2.5 GHz SW-337, SW-338, SW-339 V2.00 Features q q q SO-8 PIN 8 .1497-.1574 (3.80-4.00) -B.2284-.2440 (5.80-6.20) .

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www.DataSheet4U.com Matched GaAs SPST Switch 5 - 3000 MHZ Features q q q q SW-215/216 V2.00 DI-1 0.87 (22.1 Ϯ 0.5) CTL RF 1 Low Insertion Loss, 1.

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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HG-0113 Shipped in packet-tape reel(5,000pcs per reel) Notice : It is requested to read and accept IMPORTANT NOTICE written on the back of the front

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HG-0114 Shipped in packet-tape reel(5,000pcs per reel) Notice : It is requested to read and accept IMPORTANT NOTICE written on the back of the front

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SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-chan

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< High-power GaAs FET (small signal gain stage) > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION The MGF0905A, GaAs FET with an N-channel schot

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