gaas Datasheet | Specifications & PDF Download

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P

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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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www.DataSheet4U.com RoHS Compliant MASWSS0167 V2 Functional Schematic 2.5 V GaAs SPDT Switch 0.5 - 3.0 GHz Features • • • • • • • • Low Voltage Oper

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Laser diodes AlGaAs laser diodes RLD-78MA The RLD-78MA is world’s first mass-produced laser diodes that is manufactured by molecular beam epitaxy. Th

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RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G

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GaAs 4 Bit Digital Attenuator 1, 2, 4, 8 dB Bits DC–2 GHz Features s Low DC Power Consumption s Attenuation in 1 dB Steps to 15 dB with High Accuracy

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Laser diodes AlGaAs laser diodes RLD-78MC The RLD-78MC is the world’s first mass-produced laser diodes that is manufactured by molecular beam epitaxy

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LS-0810 Series FEATURES  810nm Peak Wavelength  Long Life  RoHS Compliant  High Reliability DESCRIPTION The LS-0810 Series are AlGaAs LEDs with

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Preliminary GaAs PHEMT Switchable Gain LNA AL108-338 Features ■ For 3.2–3.8 GHz Fixed Wireless Applications ■ Adjustable Gain ■ +7 dBm Output Power ■

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Features • Low Insertion Loss: 0.4 dB @ 1.0 GHz • High Isolation: 26 dB @ 2.0 GHz • Single low control voltage: 1.3 to 3.3 V • No external DC blocking

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Laser diodes AlGaAs laser diode in very compact package RLD-78MAT4S The RLD-78MAT4S is a laser diode housed in ROHM’s custom small 3.3 mm package. Us

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Laser diodes AlGaAs laser diode RLD-78MD The RLD-78MD is a laser diode designed for minidisc playback. This device has low noise at high optical outp

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Laser diodes AlGaAs laser diodes RLD-78MAT1 The RLD-78MAT1 is the world’s first mass-produced laser diodes that is manufactured by molecular beam epi

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Laser diodes AlGaAs laser diodes RLD-78PP-B / RLD-78NP-D The RLD-78PP-B and RLD-78NP-D are the world’s first mass-produced laser diodes those are man

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QPA3230 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz RFMD + TriQuint = Qorvo QPA3230 The QPA3230 is a Hybrid Power Doubler amplifier module. The p

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www.DataSheet4U.com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz

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NEC's 1310 nm InGaAsP MQW FP TOSA NX7314UA FOR LONG HAUL 155 Mb/s APPLICATION FEATURES • OPTICAL OUTPUT POWER: Pf = 1.0 mW • LOW THRESHOLD CURRENT Ith

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