p-Hemt Datasheet | Specifications & PDF Download

E-pHEMT MMIC Product Features • Small size (4 x 4 mm) • High gain • High linearity • Low cost • Low Noise Figure • 30dB AGC Range • Pb-free/RoHS compl

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2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics.

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FLK207XV GaAs FET & HEMT Chips FEATURES •www.DataSheet4U.com High Output Power: P1dB = 32.5dBm(Typ.) • High Gain: G1dB = 6.0dB(Typ.) • High PAE: ηadd

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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Amplifiers - Low Noise - SMT v01.0310 7 Typical Applications This HMC902LP3E is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Mi

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CGH40180PP 180 W, RF Power GaN HEMT Description Wolfspeed's CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

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GTRA262802FC Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Description The GTRA262802FC is a 250-watt (P3dB) GaN on Si

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SPF-5189Z 50MHz to 4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF-5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Package: SOT-89 P

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CLF1G0035-200P; CLF1G0035S-200P Broadband RF power GaN HEMT Rev. 1 — 22 April 2016 Product data sheet 1. Product profile 1.1 General description Th

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Preliminary Data Sheet • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Sou

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E-pHEMT MMIC Product Features • 30 ~ 2150MHz • High Gain • High linearity • SOIC-8 SMD Type package • Lower manufacturing cost • Low Noise Figure • -6

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www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300

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FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(T

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E-pHEMT Product Features • 10 ~ 4000MHz • GaAs E-pHEMT • 0.7dB Noise Figure • 32dBm Output IP3 • 14dB Gain at 1900MHz • 14dBm P1 dB • SOT-143 Package

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E-pHEMT MMIC Product Features • 4-Way Splitter • Small size (3X3 mm) • QFN SMD Type package • Higher productivity • Lower manufacturing cost • -63dBc

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VMMK-2303 0.5 to 6 GHz 1.8 V E-pHEMT Shutdown LNA in Wafer Level Package Data Sheet Description Avago’sVMMK-2303 is an easy-to-use GaAs MMIC amplifie

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advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTV

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CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operat

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TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT

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MICROWAVE POWER GaN HEMT TGI5867-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 12.5dB at

Rating: 1 ★ (5 votes)