p-Hemt Datasheet | Specifications & PDF Download

CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300

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CFY67 HiRel K-Band GaAs Super Low Noise HEMT • • • • • • • HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For profe

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MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G I

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Preliminary PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC–2 GHz AS205-322 I High Linearity (50 dBm IP3 @ 0.9 GHz) @3V I Low Insertion

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MICROWAVE POWER GaN HEMT TGI7179-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43.5dBm ŋHIGH GAIN GL= 12.0dB a

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SPF-5189Z 50MHz to 4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF-5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Package: SOT-89 P

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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AMPLIFIERS - LINEAR & POWER - CHIP PRELIMINARY Typical Applications The HMC994A is ideal for: • Test Instrumentation • Microwave Radio & VSAT • Milit

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2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics.

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< Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) i

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CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)

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® Product Overview The Qorvo QPD2025D is a discrete 250 micron pHEMT which operates from DC to 20 GHz. The QPD2025D is fabricated using Qorvo’s proven

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Advanced Information SPF-5043Z Product Description The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 400-3000 MHz. The o

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PT152 p-Hemt CATV Amplifer Features 45 - 1000MHz Applications Headend Driver Amplifier Functional Diagram 5 13.5dB Gain at 45MHz CSO 68dBc @+37dBm

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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Product Description Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm d

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