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PNP Silicon Transistor ector Emitter Saturation Voltage at -IC=100mA,-IB=10mA Base Emitter Voltage at –VCE=1V,-IC=100mA Transition Frequency at -VCE=6V, -IC=20mA Collector Output Capacitance at -VCB=6V, f=1MHz hFE hFE hFE hFE -ICBO -IEBO -VCEsat -VBE fT COB 70 120 2 |
 SEMTECH |
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PNP Power Transistor Designed for use in general purpose power amplifier and switching applications. • Collector-emitter sustaining voltage-VCEO (sus) = 100V (minimum). • Collector-emitter saturation voltage-VCE (sat) = 1.5V (maximum) at IC = 6.0A. • Current gain-bandwi |
 Multicomp |
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PNP Transistor High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) op |
 ETC |
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Silicon PNP Power Transistors or-emitter saturation voltage IC=-5A; IB=-0.5A VBE Base-emitter voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE DC current gain IC=-5A ; VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V fT Transition frequency IC=-1A |
 Savantic |
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PNP MEDIUM POWER TRANSISTOR ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter Description The device is a PNP transistor manufactured by using planar Technol |
 STMicroelectronics |
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Silicon PNP transistor PC 、IC ,hFE , 9013 。 High PC and IC，excellent hFE linearity，complementary pair with 9013. / Applications 。 Amplifier of portable radios in class B push-pull operation. / Equivalent Circuit / Pinning 123 PIN1：Collector PIN 2：Base PIN 3：Em |
 BLUE ROCKET ELECTRONICS |
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PNP Epitaxial Silicon Transistor t V V V µA µA hFE CLASSIFICATION Classification hFE R 90-180 Q 135-270 P 200-400 K 300-600 Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@el |
 Elite |
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PNP Transistor • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) x High DC Current Gain:90Љ hFEЉ600.(VCE=-6.0V, IC=-1mA) x High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity |
 MCC |
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Silicon PNP Darlington Power Transistors |
 SavantIC |
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Silicon PNP Transistor cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab |
 Toshiba Semiconductor |
| Total 15218 results |
