volt-only Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MC145407/D MC145407 Advance Information 5 Volt Only Driver/Receiver EIA–232–E and CC

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Am29LV017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fuj

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HY29F080 8 Megabit (1M x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n Hi

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HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K word Boot B

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KH29SV400C T/B KH29SV400C T/B DATASHEET P/N:PM1587 REV. 0.00, APR. 14, 2010 1 ADVANCED INFORMATION KH29SV400C T/B FEATURES 4M-BIT [512K x 8 / 25

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Am29LV160B 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory This product has been retired and is not recommended for

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Am29LV160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s Single power supply operat

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Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture – Sixty-three

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Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K Word (64K Bytes) Sec

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architectur

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PRELIMINARY Am29F002NT/Am29F002NB 2 Megabit (262,144 x 8-Bit) CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0

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Am29F010B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to thi

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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HY29F800 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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