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ACE Technology

ACE2370M Datasheet Preview

ACE2370M Datasheet

N-Channel MOSFET

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ACE2370M
N-Channel 100-V MOSFET
Description
ACE2370M uses advanced trench technology to provide excellent RDS(ON).
This device particularly suits for low voltage application such as power management of desktop
computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications:
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters
White LED boost converters
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Current b
TA=25°C
TA=70°C
Continuous Source Current (Diode Conduction) a
Power Dissipationa
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
100
±20
1.5
1.2
10
1.6
1.3
0.8
-55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a
t<=10sec
Steady State
Symbol Maximum Unit
RθJA
100
°C/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1




ACE Technology

ACE2370M Datasheet Preview

ACE2370M Datasheet

N-Channel MOSFET

No Preview Available !

Packaging Type
Ordering information
ACE2370M BM + H
Halogen - free
Pb - free
BM : SOT-23-3
ACE2370M
N-Channel 100-V MOSFET
VER 1.1 2


Part Number ACE2370M
Description N-Channel MOSFET
Maker ACE Technology
Total Page 7 Pages
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