Datasheet4U Logo Datasheet4U.com

ACE4908A - Dual P-Channel Enhancement Mode MOSFET

Description

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ACE4908A

Datasheet Details

Part number ACE4908A
Manufacturer ACE Technology
File Size 421.80 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ACE4908A Datasheet
Additional preview pages of the ACE4908A datasheet.

📁 Similar Datasheet

  • ACE4000 - 3 Bay / 12 Kilowatt Power Shelf (Lineage Power)
  • ACE-3600 - RNC-Site Gateway Manual (RAD Data Communications)
  • ACE-716 - RUGGED AC/DC INPUT 150W POWER SUPPLY (ETC)
  • ACE1001 - Arithmetic Controller Engine (Fairchild Semiconductor)
  • ACE1101 - Arithmetic Controller Engine (ACEx) for Low Power Applications (Fairchild Semiconductor)
  • ACE1202 - Arithmetic Controller Engine (Fairchild Semiconductor)
  • ACE125RUW48 - 5 Bay / 6 Kilowatt Power Shelf (Lineage Power)
  • ACE1501 - Arithmetic Controller Engine (Fairchild Semiconductor)
  • ACE1502 - Arithmetic Controller Engine (Fairchild Semiconductor)
  • ACE2302BBM - N-Channel MOSFET (VBsemi)
Other Datasheets by ACE Technology
  • ACE4922 - Dual N-Channel Enhancement Mode MOSFET
  • ACE4922BEM - Dual N-Channel Enhancement Mode Field Effect Transistor
  • ACE4940M - Dual N-Channel 40-V MOSFET
  • ACE4953B - Dual P-Channel Enhancement Mode Field Effect Transistor
  • ACE4010M - N-Channel MOSFET
  • ACE4054 - Fully integrated constant current/constant voltage Li-ion battery charger
  • ACE4101 - Li-ion Switching Charger IC
  • ACE431S - Adjustable Precision Shunt Regulator

Full PDF Text Transcription

Click to expand full text
ACE4908A Dual P-Channel Enhancement Mode MOSFET Description The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features • P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.
Published: |