* P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V
* Super high density cell design for extre.

such as notebook computer power management and other battery powered circuits where high-side switching, low in-line pow.

The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.

ACE4922

ACE4922BEM

ACE4940M

ACE4953B

ACE4000

ACE4010M

ACE4054

ACE4101

ACE431S

ACE432

ACE432A

ACE4722

ACE-3600