AP30G04NF Datasheet, MOSFET, APM

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AP30G04NF Features and benefits

VDS =40V ID =38A RDS(ON) < 10mΩ @ VGS=10V （Type：8.0mΩ） VDS = -40V ID =-35A RDS(ON) < 18mΩ @ VGS=-10V （Type：13mΩ） Application BLDC Package Marking and Ordering Infor.

AP30G04NF Application

, should be limited by total power dissipation 2 AP30G04NF REV1.0 AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET.

AP30G04NF Description

AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET The AP30G04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection o.

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