VDS = 30V ID =3.0A
AP3400EI
30V N-Channel Enhancement Mode MOSFET
RDS(ON) <98mΩ @ VGS=4.5V （Type:80mΩ）
Application
Lithium battery protection Wireless impact
Mobile .
, should be limited by total power dissipation.
2
AP3400EI REV1.0
AP3400EI
30V N-Channel Enhancement Mode MOSFET
Pa.
The AP3400EI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VD.
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