AP3414MI Overview
The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Part number | AP3414MI |
|---|---|
| Datasheet | AP3414MI-APM.pdf |
| File Size | 604.55 KB |
| Manufacturer | APM |
| Description | 30V N-Channel Enhancement Mode MOSFET |
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The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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