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AP3414MI Datasheet 30V N-Channel Enhancement Mode MOSFET

Manufacturer: APM

Datasheet Details

Part number AP3414MI
Manufacturer APM
File Size 604.55 KB
Description 30V N-Channel Enhancement Mode MOSFET
Download AP3414MI Download (PDF)

General Description

The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Overview

AP3414MI 30V N-Channel Enhancement Mode MOSFET.

Key Features

  • VDS = 30V ID =18A RDS(ON) < 12mΩ @ VGS=10V (Type:9.0mΩ) RDS(ON) < 13mΩ @ VGS=10V (Type:11mΩ).