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AP3414MI Datasheet, MOSFET, APM

AP3414MI Datasheet, MOSFET, APM

AP3414MI

datasheet Download (Size : 604.55KB)

AP3414MI Datasheet
AP3414MI

datasheet Download (Size : 604.55KB)

AP3414MI Datasheet

AP3414MI Features and benefits

AP3414MI Features and benefits

VDS = 30V ID =18A RDS(ON) < 12mΩ @ VGS=10V (Type:9.0mΩ) RDS(ON) < 13mΩ @ VGS=10V (Type:11mΩ) Application VBUS Wireless impact Mobile phone fast charging Package Marking .

AP3414MI Application

AP3414MI Application

, should be limited by total power dissipation. Max. --12 13 2.5 --1 5 ±100 ------------------------46 92 1 Unit V mΩ .

AP3414MI Description

AP3414MI Description

The AP3414MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VD.

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TAGS

AP3414MI
30V
N-Channel
Enhancement
Mode
MOSFET
APM

Manufacturer


APM

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