VDS = -30V ID =-9.3A RDS(ON) <20mΩ @ VGS=-10V (Type:16mΩ)
Application
Lithium battery protection Wireless impact Mobile phone fast charging
Only Use times
gsheng Packag.
, should be limited by total power dissipation.
For
2
AP4435B RVE1.0
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AP4435B
-30V P-Channel Enhancement Mode MOSFET
The AP4435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in .
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