VDS = 20V ID =8.5A
RDS(ON) < 28mΩ @ VGS=4.5V （Type：24mΩ）
VDS = -20V ID =-7.6A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：29mΩ）
Application
BLDC
Package Marking and Ordering In.
, should be limited by total power dissipation.
Max. ---
28
40 1.2 1 5 ±100 ----------------------3.6 1.2
Unit V mΩ V .
AP8G02BLI
20V N+P-Channel Enhancement Mode MOSFET
The AP8G02BLI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection o.
Image gallery
TAGS
+P-Channel
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