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AP8G02LI Datasheet, MOSFET, APM

AP8G02LI Datasheet, MOSFET, APM

AP8G02LI

datasheet Download (Size : 1.44MB)

AP8G02LI Datasheet
AP8G02LI

datasheet Download (Size : 1.44MB)

AP8G02LI Datasheet

AP8G02LI Features and benefits

AP8G02LI Features and benefits

VDS = 20V ID =8.5A RDS(ON) < 35mΩ @ VGS=10V (Type:28mΩ) VDS = -20V ID =-7.8A RDS(ON) < 38mΩ @ VGS=-10V(Type:28mΩ) Application BLDC Package Marking and Ordering Info.

AP8G02LI Application

AP8G02LI Application

, should be limited by total power dissipation. Unit V mΩ V uA nA S nC ns pF A V 2 AP8G02LI RVE1.0 AP8G02LI 20V N+.

AP8G02LI Description

AP8G02LI Description

AP8G02LI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or .

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TAGS

AP8G02LI
20V
N
+P-Channel
Enhancement
Mode
MOSFET
APM

Manufacturer


APM

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