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AP8G04BS - 40V N+P-Channel Enhancement Mode MOSFET

General Description

The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 40V ID =8.8A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -40V ID =-7.2A RDS(ON) < 50mΩ @ VGS=-10V （Type：42mΩ）.

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Datasheet Details

Part number AP8G04BS
Manufacturer APM
File Size 900.37 KB
Description 40V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP8G04BS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP8G04BS 40V N+P-Channel Enhancement Mode MOSFET Description The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =8.8A RDS(ON) < 35mΩ @ VGS=10V （Type：28mΩ） VDS = -40V ID =-7.