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AP8G04BS Datasheet, MOSFET, APM

AP8G04BS Datasheet, MOSFET, APM

AP8G04BS

datasheet Download (Size : 900.37KB)

AP8G04BS Datasheet
AP8G04BS

datasheet Download (Size : 900.37KB)

AP8G04BS Datasheet

AP8G04BS Features and benefits

AP8G04BS Features and benefits

VDS = 40V ID =8.8A RDS(ON) < 35mΩ @ VGS=10V (Type:28mΩ) VDS = -40V ID =-7.2A RDS(ON) < 50mΩ @ VGS=-10V (Type:42mΩ) Application Wireless charging Boost driver Brushless mo.

AP8G04BS Application

AP8G04BS Application

, should be limited by total power dissipation. Max. ----37 50 2.5 --1 5 ±100 --4.8 --------------------4.5 14 1.2 Uni.

AP8G04BS Description

AP8G04BS Description

The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VD.

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TAGS

AP8G04BS
40V
N
+P-Channel
Enhancement
Mode
MOSFET
APM

Manufacturer


APM

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