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AP8G04BS - 40V N+P-Channel Enhancement Mode MOSFET

AP8G04BS Description

AP8G04BS 40V N+P-Channel Enhancement Mode MOSFET .
The AP8G04BS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

AP8G04BS Applications

* , should be limited by total power dissipation. Max.
* 37 50 2.5
* 1 5 ±100
* 4.8
* 4.5 14 1.2 Unit V V/℃ mΩ V mV/℃ uA nA S Ω nC ns pF A A V 2 AP8G04BS REV1.0 AP8G04BS 40V N+P

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Datasheet Details

Part number
AP8G04BS
Manufacturer
APM
File Size
900.37 KB
Datasheet
AP8G04BS-APM.pdf
Description
40V N+P-Channel Enhancement Mode MOSFET

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40V N +P-Channel Enhancement Mode MOSFET APM
APM AP8G04BS-like datasheet