Datasheet4U Logo Datasheet4U.com

MSC80183 - NPN RF TRANSISTOR

Description

The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz.

Features

  • Hermetically Sealed Package Gold Metallization.

📥 Download Datasheet

Datasheet Details

Part number MSC80183
Manufacturer Advanced Semiconductor
File Size 51.21 KB
Description NPN RF TRANSISTOR
Datasheet download datasheet MSC80183 Datasheet

📁 Similar Datasheet

  • MSC80185 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS (STMicroelectronics)
  • MSC80186 - GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS (STMicroelectronics)
  • MSC80195 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS (STMicroelectronics)
  • MSC80196 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS (STMicroelectronics)
  • MSC80197 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS (STMicroelectronics)
  • MSC80064 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS (Advanced Power Technology)
  • MSC81002 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS (STMicroelectronics)
  • MSC81005 - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS (STMicroelectronics)
  • MSC8101 - Network Digital Signal Processor (NXP)
  • MSC8101 - Network Digital Signal Processor (Motorola)
Other Datasheets by Advanced Semiconductor

Full PDF Text Transcription

Click to expand full text
MSC80183 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package Gold Metallization MAXIMUM RATINGS IC VCC VEB www.DataSheet4U.com 1.2 A 26 V 3.5 V 21.4 W @ TC = 50 C -65 C to +200 C -65 C to +200 C 7.0 C/W O O O O O O PDISS TJ TSTG θJC 1 = Collector 2 = Emitter 3 = Base TRANS1.SYM CHARACTERISTICS SYMBOL BVCER BVCBO BVEBO ICBO hFE COB Pout PG ηC VCC = 22 V IC = 5.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V TC = 25 C O TEST CONDITIONS RBE = 10Ω MINIMUM 44 44 3.5 TYPICAL MAXIMUM UNITS V V V 0.5 IC = 500 mA f = 1.0 MHz 7.0 PIN = 0.76 W f = 2.3 GHz 9.6 40 8.0 10.
Published: |