MSC80914 transistor equivalent, npn silicon rf power transistor.
INCLUDE:
* Gold Metalization
* Site Emitter Ballasting
L
G
H J
F I K M NP
MAXIMUM RATINGS
IC VCC
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DIM A B C D E F
MINIMUM
inches / mm
MA.
to 2.3 GHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES INCLUDE:
* Gold Metalization
* S.
The ASI MSC80914 is Designed for Class C, Common Base General Purpose Applications to 2.3 GHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES INCLUDE:
* Gold Metalization
* Site Emitter Ballasting
L
G
H J
F I K M NP
.
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