MSC80917 transistor equivalent, npn silicon rf microwave transistor.
INCLUDE:
* Omnigold™ Metalization System
* POUT 4.0 W Min.
* GP = 10 dB
MAXIMUM RATINGS
IC
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1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 .
PACKAGE STYLE .280 2L FL (B)
2 3 1
FEATURES INCLUDE:
* Omnigold™ Metalization System
* POUT 4.0 W Min.
*.
The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications.
PACKAGE STYLE .280 2L FL (B)
2 3 1
FEATURES INCLUDE:
* Omnigold™ Metalization System
* POUT 4.0 W Min.
* GP = 10 dB
MAXIMUM RATINGS
.
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