AFN4608S mosfet equivalent, 60v n-channel enhancement mode mosfet.
* ID= 9A,RDS(ON)= 12mΩ@VGS=10V
* ID= 7A,RDS(ON)= 15mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* DFN5X6-8L package design
App.
Pin Description ( DFN5X6-8L )
Features
* ID= 9A,RDS(ON)= 12mΩ@VGS=10V
* ID= 7A,RDS(ON)= 15mΩ@VGS=4.5V
* Su.
AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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