AFN5802S
AFN5802S is 80V N-Channel Enhancement Mode MOSFET manufactured by Alfa-MOS.
- Part of the AFN5802S-Alfa comparator family.
- Part of the AFN5802S-Alfa comparator family.
Alfa-MOS
Technology
80V N-Channel Enhancement Mode MOSFET
General Description
AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications.
Pin Description ( DFN5X6-8L )
Features
- ID=20A,RDS(ON)=3.8mΩ@VGS=10V
- ID=20A,RDS(ON)=4.8mΩ@VGS= 6V
- Super high density cell design for extremely low RDS (ON)
- DFN5X6-8L package design
Application
- Networking / Tele / Server
- LED Lighting Applications
- Quick Charger Applications
- DC-DC Primary Side...
