AFN5802S - 80V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Download the AFN5802S datasheet PDF. This datasheet also covers the AFN5802S-Alfa variant, as both devices belong to the same 80v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

ID=20A,RDS(ON)=3.8mΩ@VGS=10V.
ID=20A,RDS(ON)=4.8mΩ@VGS= 6V.
Super high density cell design for extremely low RDS (ON).
DFN5X6-8L package design.

📥 Download Datasheet

AFN5802S 80v n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN5802S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN5802S
Manufacturer	Alfa-MOS
File Size	813.00 KB
Description	80V N-Channel Enhancement Mode MOSFET
Datasheet	AFN5802S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Alfa-MOS Technology AFN5802S 80V N-Channel Enhancement Mode MOSFET General Description AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features  ID=20A,RDS(ON)=3.8mΩ@VGS=10V  ID=20A,RDS(ON)=4.