AFN5802S mosfet equivalent, 80v n-channel enhancement mode mosfet.
* ID=20A,RDS(ON)=3.8mΩ@VGS=10V
* ID=20A,RDS(ON)=4.8mΩ@VGS= 6V
* Super high density cell design
for extremely low RDS (ON)
* DFN5X6-8L package design
Appl.
Pin Description ( DFN5X6-8L )
Features
* ID=20A,RDS(ON)=3.8mΩ@VGS=10V
* ID=20A,RDS(ON)=4.8mΩ@VGS= 6V
* Sup.
AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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