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AFN5808W, AFN5808W-Alfa Datasheet - Alfa-MOS

AFN5808W N-Channel MOSFET

AFN5808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN5808W Features

* 20V/6.2A,RDS(ON)=32mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=38mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=50mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X5-6L package design Application Load Switch Portable Equipment Battery Powered Syst

AFN5808W-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN5808W, AFN5808W-Alfa. Please refer to the document for exact specifications by model.
AFN5808W Datasheet Preview Page 2 AFN5808W Datasheet Preview Page 3

Datasheet Details

Part number:

AFN5808W, AFN5808W-Alfa

Manufacturer:

Alfa-MOS

File Size:

596.58 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN5808W, AFN5808W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN5808W AFN5808W-Alfa N-Channel MOSFET Alfa-MOS

AFN5808W Distributor