AFN5808W Datasheet, Mosfet, Alfa-MOS

AFN5808W Features

• Mosfet 20V/6.2A,RDS(ON)=32mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=38mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=50mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maxi

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Part number:

AFN5808W

Manufacturer:

Alfa-MOS

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596.58kb

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📄 Datasheet

Description:

N-channel mosfet. AFN5808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN5808W Application

• Applications Pin Description ( DFN2X5-6L ) AFN5808W 20V N-Channel Enhancement Mode MOSFET Features 20V/6.2A,RDS(ON)=32mΩ@VGS=4.5V 20V/4.6A,RDS(ON)

TAGS

AFN5808W

Alfa-MOS

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