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AFN5853AS, AFN5853AS-Alfa Datasheet - Alfa-MOS

AFN5853AS Dual N-Channel MOSFET

AFN5853AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Des.

AFN5853AS Features

* z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design Application z POL z DC/DC Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1

AFN5853AS-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN5853AS, AFN5853AS-Alfa. Please refer to the document for exact specifications by model.
AFN5853AS Datasheet Preview Page 2 AFN5853AS Datasheet Preview Page 3

Datasheet Details

Part number:

AFN5853AS, AFN5853AS-Alfa

Manufacturer:

Alfa-MOS

File Size:

602.52 KB

Description:

Dual n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN5853AS, AFN5853AS-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN5853AS AFN5853AS-Alfa Dual N-Channel MOSFET Alfa-MOS

AFN5853AS Distributor