AFN5802S Datasheet - Alfa-MOS

80V N-Channel Enhancement Mode MOSFET

AFN5802S Features

* ID=20A,RDS(ON)=3.8mΩ@VGS=10V

* ID=20A,RDS(ON)=4.8mΩ@VGS= 6V

* Super high density cell design for extremely low RDS (ON)

* DFN5X6-8L package design Application

* Networking / Telecom / Server

* LED Lighting Applications

* Quick Charger Applications

* DC-DC Primary S

AFN5802S General Description

AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN5802S Datasheet (813.00 KB)

AFN5802S Datasheet Preview — Preview of AFN5802S PDF

Datasheet Details

Part number:

AFN5802S

Manufacturer:

Alfa-MOS

File Size:

813.00 KB

Description:

80v n-channel enhancement mode mosfet.

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AFN5802S 80V N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN5802S Features

AFN5802S General Description

Datasheet Details

File Size:

Description:

AFN5802S Distributor