AFN5802S, AFN5802S-Alfa 80V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology AFN5802S 80V N-Channel Enhancement Mode MOSFET General .
AFN5802S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN5802S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN5802S, AFN5802S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN5802S, AFN5802S-Alfa
Manufacturer: Alfa-MOS
File Size: 813.00 KB
Datasheet: AFN5802S-Alfa-MOS.pdf
Description: 80V N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN5802S, AFN5802S-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=20A,RDS(ON)=3.8mΩ@VGS=10V
* ID=20A,RDS(ON)=4.8mΩ@VGS= 6V
* Super high density cell design for extremely low RDS (ON)

AFN5802S Distributors

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📌 All Tags

AFN5802S-Alfa 80V N-Channel Enhancement Mode MOSFET Alfa-MOS

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