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AFN5853AS - Dual N-Channel MOSFET

This page provides the datasheet information for the AFN5853AS, a member of the AFN5853AS-Alfa Dual N-Channel MOSFET family.

Description

AFN5853AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design.

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Datasheet Details

Part number AFN5853AS
Manufacturer Alfa-MOS
File Size 602.52 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AFN5853AS Datasheet
Additional preview pages of the AFN5853AS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology AFN5853AS 40V Dual N-Channel Enhancement Mode MOSFET General Description AFN5853AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.
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