AFN5853AS mosfet equivalent, dual n-channel mosfet.
z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.5V z Super high density cell design for extremely low
RDS (ON) z Exceptional on-resistance and maximum DC
curre.
Pin Description ( DFN5X6-8L )
Features
z 40V/18A,RDS(ON)=9mΩ@VGS=10V z 40V/15A,RDS(ON)=11mΩ@VGS=4.5V z Super high dens.
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