AFN6424S mosfet equivalent, n-channel mosfet.
30V/5.0A,RDS(ON)=38mΩ@VGS=10.0V 30V/4.0A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
Power Manageme.
Pin Description ( TSOP-6 )
AFN6424S
30V N-Channel Enhancement Mode MOSFET
Features
30V/5.0A,RDS(ON)=38mΩ@VGS=10.0V 30V.
AFN6424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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