AFN6424S - 30V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFN6424S, a member of the AFN6424S-Alfa 30V N-Channel Enhancement Mode MOSFET family.

Product Overview

Alfa-MOS

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Datasheet Details

Part number	AFN6424S
Manufacturer	Alfa-MOS
File Size	331.03 KB
Description	30V N-Channel Enhancement Mode MOSFET
Datasheet	AFN6424S Datasheet
Additional preview pages of the AFN6424S datasheet.

AFN6424S Product details

Description

AFN6424S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

30V/5.0A,RDS(ON)=38mΩ@VGS=4.5V.
30V/4.0A,RDS(ON)=50mΩ@VGS=2.5V.
Super high density cell design for extremely low RDS (ON).
TSOP-6 package design.

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Published: Dec 1, 2018 |