AFN6804S mosfet equivalent, n-channel mosfet.
z 100V/20A,RDS(ON)=6.8mΩ@VGS=10V z 100V/15A,RDS(ON)=9.8mΩ@VGS=4.5V z Super high density cell design for extremely low
RDS (ON) z DFN5X6-8L package design
Application
z N.
Pin Description ( DFN5X6-8L )
Features
z 100V/20A,RDS(ON)=6.8mΩ@VGS=10V z 100V/15A,RDS(ON)=9.8mΩ@VGS=4.5V z Super high.
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