AFN7798WS mosfet equivalent, 200v n-channel enhancement mode mosfet.
* ID=1.5A,RDS(ON)=580mΩ@VGS=10V
* ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-resistance a.
Pin Description ( DFN3.3X3.3-8L )
AFN7798WS
200V N-Channel Enhancement Mode MOSFET
Features
* ID=1.5A,RDS(ON)=580m.
AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other b.
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