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AFP1073 - P-Channel MOSFET

Download the AFP1073 datasheet PDF. This datasheet also covers the AFP1073-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP1073, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -20V/-0.45A, RDS(ON)= 620 mΩ@ VGS =-4.5V.
  • -20V/-0.35A, RDS(ON)= 860 mΩ@ VGS =-2.5V.
  • -20V/-0.25A, RDS(ON)= 1450 mΩ@ VGS =-1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • SOT-723 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP1073-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP1073
Manufacturer Alfa-MOS
File Size 400.22 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1073 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP1073E P-Channel MOSFET
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET
AFP1023E P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP1073, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-723 ) AFP1073 20V P-Channel Enhancement Mode MOSFET Features  -20V/-0.45A, RDS(ON)= 620 mΩ@ VGS =-4.5V  -20V/-0.35A, RDS(ON)= 860 mΩ@ VGS =-2.5V  -20V/-0.25A, RDS(ON)= 1450 mΩ@ VGS =-1.