AFP1073 Datasheet, Alfa-MOS

* -20V/-0.45A, RDS(ON)= 620 mΩ@ VGS =-4.5V
* -20V/-0.35A, RDS(ON)= 860 mΩ@ VGS =-2.5V
* -20V/-0.25A, RDS(ON)= 1450 mΩ@ VGS =-1.8V
* Low Offset (Error) Vol.

Pin Description ( SOT-723 ) AFP1073 20V P-Channel Enhancement Mode MOSFET Features
* -20V/-0.45A, RDS(ON)= 620 mΩ@.

AFP1073, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-l.