AFP3411 Datasheet, Alfa-MOS

-30V/-6.0A,RDS(ON)=32mΩ@VGS=10V -30V/-4.5A,RDS(ON)=42mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Manage.

Pin Description ( TSOP-6 ) AFP3411 30V P-Channel Enhancement Mode MOSFET Features -30V/-6.0A,RDS(ON)=32mΩ@VGS=10V -30V.

AFP3411, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.