AFP3427W Description
AFP3427W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3427W 105V P-Channel Enhancement Mode MOSFET.
AFP3427W Key Features
- ID= -1.0A,RDS(ON)=600 mΩ @VGS=-10V
- ID= -0.5A,RDS(ON)=620 mΩ @VGS=-4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design
- Active Clamp Circuits in DC/DC Power Supplies