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AFP3427W - 105V P-Channel MOSFET

Download the AFP3427W datasheet PDF. This datasheet also covers the AFP3427W-Alfa variant, as both devices belong to the same 105v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP3427W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • ID= -1.0A,RDS(ON)=600 mΩ @VGS=-10V.
  • ID= -0.5A,RDS(ON)=620 mΩ @VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP3427W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP3427W
Manufacturer Alfa-MOS
File Size 561.25 KB
Description 105V P-Channel MOSFET
Datasheet download datasheet AFP3427W Datasheet

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Other Datasheets by Alfa-MOS

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP3427W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-6L ) AFP3427W 105V P-Channel Enhancement Mode MOSFET Features  ID= -1.0A,RDS(ON)=600 mΩ @VGS=-10V  ID= -0.5A,RDS(ON)=620 mΩ @VGS=-4.