AFP3427W mosfet equivalent, 105v p-channel mosfet.
* ID= -1.0A,RDS(ON)=600 mΩ @VGS=-10V
* ID= -0.5A,RDS(ON)=620 mΩ @VGS=-4.5V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-re.
Pin Description ( SOT-23-6L )
AFP3427W
105V P-Channel Enhancement Mode MOSFET
Features
* ID= -1.0A,RDS(ON)=600 mΩ .
AFP3427W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
Download