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AO3415A Datasheet 20V P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

General Description

Product Summary The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch applications.

VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -5A < 41mW < 53mW < 65mW SOT23 Top View Bottom View D D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5 -4 -30 1.5 1 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 65 85 Maximum Junction-to-Lead Steady-State RqJL 43 Max 80 100 52 Units V V A W °C Units °C/W °C/W °C/W Rev.

Overview

AO3415A 20V P-Channel MOSFET General.