AO3416L - N-Channel MOSFET

Product Overview

Alpha & Omega Semiconductors

Part number	AO3416L
Manufacturer	Alpha & Omega Semiconductors
File Size	118.88 KB
Description	N-Channel MOSFET
Datasheet	AO3416L Datasheet
Additional preview pages of the AO3416L datasheet.

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 6.5 5.2 30 1.4 0.

📁 Similar Datasheet

Other Datasheets by Alpha & Omega Semiconductors

Published: May 12, 2020 |