AO3416L Datasheet N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Datasheet Details

The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Rev 2: Nov 2004 AO3416, AO3416L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor.

VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±8 6.5 5.2 30 1.4 0.

Brand Logo	Part Number	Description	Manufacturer
	AO3416	N-Channel MOSFET	Kexin
	AO3416	N-Channel MOSFET	VBsemi
UMW	AO3416A	N-Channel MOSFET	UMW