Datasheet Details
| Part number | AO3421 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 231.07 KB |
| Description | 30V P-Channel MOSFET |
| Download | AO3421 Download (PDF) |
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| Part number | AO3421 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 231.07 KB |
| Description | 30V P-Channel MOSFET |
| Download | AO3421 Download (PDF) |
|
|
|
Product Summary The AO3421 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -2.6A < 110mΩ < 180mΩ SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum -30 ±20 -2.6 -2.2 -20 1.4 1 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 70 100 Maximum Junction-to-Lead Steady-State RθJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 4: May 2011 www.aosmd.com Page 1 of 5 AO3421 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 µA -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 -1.9 -2.4 V ID(ON) On state drain current VGS=-10V, VDS=-5V -20 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-2.6A TJ=125°C 77 110 mΩ 100 140 VGS=-4.5V, ID=-2A 125 180 mΩ gFS Forward Transconductance VDS=-5V, ID=-2.6A 5 S VSD Diode Forward Voltage IS=-1A,VGS=0V -0.8 -1 V IS Maximum Body-Diode Continuous Current -1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 197 240 pF 42 pF 26 37 pF 3.5 7.2 11.0 Ω
AO3421 30V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO3421 | P-Channel MOSFET | Kexin |
|
AO3421E | P-Channel MOSFET | Kexin |
|
AO3421E-HF | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO3421E | 30V P-Channel MOSFET |
| AO3420 | N-Channel MOSFET |
| AO3422 | N-Channel MOSFET |
| AO3423 | 20V P-Channel MOSFET |
| AO3424 | 30V N-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |