Datasheet Details
| Part number | AO4482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 352.55 KB |
| Description | 100V N-Channel MOSFET |
| Download | AO4482 Download (PDF) |
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| Part number | AO4482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 352.55 KB |
| Description | 100V N-Channel MOSFET |
| Download | AO4482 Download (PDF) |
|
|
|
Product Summary The AO4482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 100V 6A < 37mW < 42mW SO8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 6 5 42 35 61 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 3.1 : August 2023 www.aosmd.com Page 1 of 6 AO4482 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.6 2.1 2.7 V ID(ON) On state drain current VGS=10V, VDS=5V 42 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A TJ=125°C 30 37 mW 60 72 VGS=4.5V, ID=5A 33 42 mW gFS Forward Transconductance VDS=5V, ID=6A 35 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss O
AO4482 100V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4482 | N-Channel MOSFET | Freescale |
 |
AO4482 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4480 | 40V N-Channel MOSFET |
| AO4484 | 40V N-Channel MOSFET |
| AO4485 | 40V P-Channel MOSFET |
| AO4486 | 100V N-Channel MOSFET |
| AO4488 | N-Channel MOSFET |
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |